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GigaMOS TM
Power MOSFET
IXFN230N20T
V DSS =
I D25 =
R DS(on) ≤
t rr ≤
200V
220A
7.5m Ω
200ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
miniBLOC, SOT-227
E153432
Symbol
V DSS
V DGR
Test Conditions
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Maximum Ratings
200
200
V
V
G
S
V GSS
V GSM
I D25
Continuous
Transient
T C = 25 ° C ( Chip Capability)
± 20
± 30
220
V
V
A
D
S
I L(RMS)
I DM
External Lead Current Limit
T C = 25 ° C, Pulse Width Limited by T JM
200
630
A
A
G = Gate
S = Source
D = Drain
I A
E AS
dV/dt
P D
T J
T JM
T stg
T L
T SOLD
V ISOL
M d
Weight
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 175°C
T C = 25 ° C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS t = 1 minute
I ISOL ≤ 1mA t = 1 second
Mounting Torque
Terminal Connection Torque
100
3
20
1090
-55 ... +175
175
-55 ... +175
300
260
2500
3000
1.5/13
1.3/11.5
30
A
J
V/ns
W
° C
° C
° C
° C
° C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
Isolation voltage 2500 V~
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low R DS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
Applications
BV DSS
V GS = 0V, I D = 3mA
200
V
Synchronous Recification
V GS(th)
I GSS
V DS = V GS , I D = 8mA
V GS = ± 20V, V DS = 0V
3.0
5.0
± 200
V
nA
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
I DSS
R DS(on)
V DS = V DSS , V GS = 0V
V GS = 10V, I D = 60A, Note 1
T J = 150 ° C
50 μ A
3 mA
7.5 m Ω
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
? 2011 IXYS CORPORATION, All Rights Reserved
DS100134A(06/11)
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